Meiyong Liao received his doctor of Materials Science at the Institute for Semiconductors, Chinese Academy of Science (Beijing, China) 2002. For two years he was a visiting researcher at Kyoto University, Japan. Then, he joined the Diamond Research Group at the National Institute for Materials Science, Tsukuba in 2004. Presently, he works as a principal researcher at NIMS on the topics of semiconducting diamond growth, device physics, and applications. He developed the world-record DUV diamond photodetector and proposed the photoconductive mechanism of diamond. He also proposed a novel type normally-off diamond transistor. He pioneered the semiconductor single crystal diamond MEMS/NEMS and demonstrated the SCD NEMS switch for the first time. He has been engaged in CVD diamond research for more than 15 years and published more than 150 peer-reviewed journal papers with more than 6000 citations.