Téléchargez le livre : Silicon Carbide, Volume 1

Silicon Carbide, Volume 1

Growth, Defects, and Novel Applications

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Éditeur :

Wiley-VCH


Paru le : 2011-04-08



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Description

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon.
The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches.
Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Pages
528 pages
Collection
n.c
Parution
2011-04-08
Marque
Wiley-VCH
EAN papier
9783527409532
EAN PDF
9783527629060
Informations sur l'ebook
Nombre pages copiables
0
Nombre pages imprimables
528
Taille du fichier
24177 Ko
Ce livre est accessible aux handicaps Voir les informations sur l'accessibilité
Prix
183,52 €

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