Téléchargez le livre : 1965 Transactions of the Third International Vacuum Congress

1965 Transactions of the Third International Vacuum Congress

28 Jun–2 July 1965, Stuttgart, Germany

de

Éditeur :

Pergamon


Paru le : 2013-10-22



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Description
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750°C. This book discusses the potential advantages of the technique and the mechanism of the epitaxial growth process. Organized into four sessions encompassing 42 chapters, this volume starts with an overview of the exact influence of the thin alloy layer. This text then describes the novel X-ray method and its application to semiconductor thin-film problems. Other chapters consider the field of electronic carrier transport in semiconductor films with particular reference to active thin-film devices and their typical behavior. The final chapter deals with the beta-ray single-scatter gauge, which are tested and described in very simple operation. This book is a valuable resource for physicists and scientists.
Pages
275 pages
Collection
n.c
Parution
2013-10-22
Marque
Pergamon
EAN papier
9780080121260
EAN PDF SANS DRM
9781483156309
Informations sur l'ebook
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Prix
57,97 €

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