III-Nitride Semiconductors and their Modern Devices



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Éditeur :

OUP Oxford


Paru le : 2013-08-22



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Description
This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
Pages
672 pages
Collection
n.c
Parution
2013-08-22
Marque
OUP Oxford
EAN papier
9780191503955
EAN PDF
9780191503955

Informations sur l'ebook
Nombre pages copiables
0
Nombre pages imprimables
0
Taille du fichier
10906 Ko
Prix
79,55 €

Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.

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