GaN and SiC Power Devices

From Fundamentals to Applied Design and Market Analysis

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Éditeur :

Springer


Paru le : 2024-02-01



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Description

This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Pages
264 pages
Collection
n.c
Parution
2024-02-01
Marque
Springer
EAN papier
9783031506536
EAN PDF
9783031506543

Informations sur l'ebook
Nombre pages copiables
2
Nombre pages imprimables
26
Taille du fichier
4475 Ko
Prix
63,29 €
EAN EPUB
9783031506543

Informations sur l'ebook
Nombre pages copiables
2
Nombre pages imprimables
26
Taille du fichier
15227 Ko
Prix
63,29 €

Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.

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