Variation-Aware Advanced CMOS Devices and SRAM

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Éditeur :

Springer


Collection :

Springer Series in Advanced Microelectronics

Paru le : 2016-06-06

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Description

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.
The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
Pages
140 pages
Collection
Springer Series in Advanced Microelectronics
Parution
2016-06-06
Marque
Springer
EAN papier
9789401775953
EAN EPUB
9789401775977

Informations sur l'ebook
Nombre pages copiables
1
Nombre pages imprimables
14
Taille du fichier
3533 Ko
Prix
52,99 €